Production of solar panels
1st Generation cell (cristalline silicon)
Solar grade silicon is produced in the reactors using metallurgical grade silicon by means of chemical vapor deposition (CVD) process. The process introduces silane gas with high temperature polysilicon rods inside a cooled bell jar. The silicon contained in the gas will deposit on the heated rods, which gradually grow until the desired diameter has been reached. The usage of a vacuum system is to evacuate the reactors prior to a chemical reaction taking place. Vacuum operating level for this application is anywhere from 0.5 to 1 Torr.
2nd Generation cell (thin film)
Many thin-film devices are based on amorphous silicon alloys. Other thin-film devices are usually poly-crystalline materials. The fabrication of a thin-film solar cell involves depositing a layer of semiconductor material (such as amorphous silicon, copper indium gallium diselenide, or cadmium telluride) on a low-cost substrate, such as glass, metal, or plastic. Current deposition techniques can be broadly classified into physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) or some combination of them. Vacuum pumps will see toxic, corrosive, explosive, pyrophoric and light gases such as hydrogen, Silane, helium, sulfur hexafluoride (SF6), Nitrogen trifluoride (NF3), phosphine, Germane, Boron Trifluoride and many more depending on process and technology. In addition, vacuum pumping speeds and rapid chamber cycling are essential. Our two stage vacuum systems meet the above requirement. Our systems equipped with NEMA control panel to operate on/off the system as well as safety interlocks for the system such as high oil temperature and high gas discharge temperature. Inert gas purge controls also provided to suit the application.
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